Direct Observation of Carrier Transportation between Localized States in InGaN Quantum Wells

Direct Observation of Carrier Transportation between Localized States in InGaN Quantum Wells

Despite the large misfit dislocation densities, indium gallium nitride (InGaN) demonstrates high luminous efficiency both for electroluminescence and photoluminescence. The mechanism behind it has been interpreted as the existence of potential minima (i.e., localized states), which will screen the n...

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Bibliographic Details
Main Authors: Yangfeng Li, Yixiao Li, Jie Zhang, Yi Wang, Tong Li, Yang Jiang, Haiqiang Jia, Wenxin Wang, Rong Yang, Hong Chen
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Crystals
Subjects:
InGaN
localized states
TDPL
excitation power-dependent PL
Online Access:https://www.mdpi.com/2073-4352/12/12/1837

Internet

https://www.mdpi.com/2073-4352/12/12/1837

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