Achieving a Large Energy Gap in Bi(110) Atomically Thin Films

Achieving a Large Energy Gap in Bi(110) Atomically Thin Films

Metal–insulator transition has long been one of the key subjects in condensed matter systems. Herein, the emergence of a large energy gap (Eg, 0.8–1.0 eV) in Bi(110) two‐atomic‐layer nanoribbons grown on a SnSe(001) substrate is reported, which normally has an intrinsic semimetal‐like characteristic...

Full description

Bibliographic Details
Main Authors: Qing Yuan, Yafei Li, Deping Guo, Cancan Lou, Xingxia Cui, Guangqiang Mei, Chengxiang Jiao, Kai Huang, Xuefeng Hou, Wei Ji, Limin Cao, Min Feng
Format: Article
Language:English
Published: Wiley-VCH 2023-12-01
Series:Small Structures
Subjects:
Bi(110)
energy gaps
insulator–metal transitions
qPlus atomic force microscopy
scanning tunneling microscopy
SnSe
Online Access:https://doi.org/10.1002/sstr.202300207

Internet

https://doi.org/10.1002/sstr.202300207

Similar Items