Achieving a Large Energy Gap in Bi(110) Atomically Thin Films

Achieving a Large Energy Gap in Bi(110) Atomically Thin Films

Metal–insulator transition has long been one of the key subjects in condensed matter systems. Herein, the emergence of a large energy gap (Eg, 0.8–1.0 eV) in Bi(110) two‐atomic‐layer nanoribbons grown on a SnSe(001) substrate is reported, which normally has an intrinsic semimetal‐like characteristic...

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Bibliographic Details
Main Authors:	Qing Yuan, Yafei Li, Deping Guo, Cancan Lou, Xingxia Cui, Guangqiang Mei, Chengxiang Jiao, Kai Huang, Xuefeng Hou, Wei Ji, Limin Cao, Min Feng
Format:	Article
Language:	English
Published:	Wiley-VCH 2023-12-01
Series:	Small Structures
Subjects:	Bi(110) energy gaps insulator–metal transitions qPlus atomic force microscopy scanning tunneling microscopy SnSe
Online Access:	https://doi.org/10.1002/sstr.202300207

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