Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography
A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with n -type doping by phosphine. The four contacts have different separations ( d = 9, 12,...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2016-01-01
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| Series: | New Journal of Physics |
| Online Access: | https://doi.org/10.1088/1367-2630/18/8/083001 |