Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Abstract The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) and annealing severely affect the reliability of the chips. Traditional...

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Bibliographic Details
Main Authors: Qimeng Sun, Dekun Yang, Tianjian Liu, Jianhong Liu, Shizhao Wang, Sizhou Hu, Sheng Liu, Yi Song
Format: Article
Language:English
Published: Nature Publishing Group 2023-04-01
Series:Microsystems & Nanoengineering
Online Access:https://doi.org/10.1038/s41378-023-00529-9

Internet

https://doi.org/10.1038/s41378-023-00529-9

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