An Accurate Electro-Thermal Coupling Model of a GaAs HBT Device under Floating Heat Source Disturbances
Taking into consideration the inaccurate temperature predictions in traditional thermal models of power devices, we undertook a study on the temperature rise characteristics of heterojunction bipolar transistors (HBTs) with a two-dimensional cross-sectional structure including a sub-collector region...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-12-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/12/2236 |