Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

GaN vertical PiN diodes with different anode thicknesses were fabricated on three native GaN wafers with the same p-layer doping concentrations, and planar hybrid edge termination. The breakdown behavior in terms of the breakdown voltage and the electroluminescence were studied as functions of the a...

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Bibliographic Details
Main Authors: Mona A. Ebrish, Matthew A. Porter, Alan G. Jacobs, James C. Gallagher, Robert J. Kaplar, Brendan P. Gunning, Karl D. Hobart, Travis J. Anderson
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Crystals
Subjects:
GaN
edge termination
breakdown
electroluminescence
Online Access:https://www.mdpi.com/2073-4352/12/5/623

Internet

https://www.mdpi.com/2073-4352/12/5/623

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