Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice

Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice

X-ray diffraction analysis is essential in studying stacking faults. Most of the techniques used for this purpose are based on theoretical studies. These studies suggest that the observed diffraction patterns are caused by random stacking faults in crystals. In reality, however, the condition of ran...

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Bibliographic Details
Main Authors: Igor I. Bosikov, Nikita V. Martyushev, Roman V. Klyuev, Vadim S. Tynchenko, Viktor A. Kukartsev, Svetlana V. Eremeeva, Antonina I. Karlina
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Crystals
Subjects:
X-ray diffraction
crystals with a face-centered lattice
X-ray structural analysis
wave amplitude
multi-layer stacking fault
solid amorphous bodies
Online Access:https://www.mdpi.com/2073-4352/13/3/528

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https://www.mdpi.com/2073-4352/13/3/528

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