Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice
X-ray diffraction analysis is essential in studying stacking faults. Most of the techniques used for this purpose are based on theoretical studies. These studies suggest that the observed diffraction patterns are caused by random stacking faults in crystals. In reality, however, the condition of ran...
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MDPI AG
2023-03-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/3/528 |
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| author | Igor I. Bosikov Nikita V. Martyushev Roman V. Klyuev Vadim S. Tynchenko Viktor A. Kukartsev Svetlana V. Eremeeva Antonina I. Karlina |
| author_facet | Igor I. Bosikov Nikita V. Martyushev Roman V. Klyuev Vadim S. Tynchenko Viktor A. Kukartsev Svetlana V. Eremeeva Antonina I. Karlina |
| author_sort | Igor I. Bosikov |
| collection | DOAJ |
| description | X-ray diffraction analysis is essential in studying stacking faults. Most of the techniques used for this purpose are based on theoretical studies. These studies suggest that the observed diffraction patterns are caused by random stacking faults in crystals. In reality, however, the condition of randomness for stacking faults may be violated. The purpose of the study was to develop a technique that can be used to calculate the diffraction effects of the axis of the thin plates of twin, new phases, as well as other variations in defective structures. Materials and methods. This was achieved through modern X-ray diffraction methods using differential equations (transformations and Fourier transforms) and the construction of the Ewald sphere, mathematical analysis, mathematical logic, and mathematical modeling (complex Markov chain). Conclusion. The study made it possible to develop a technique for the calculation of the diffraction effects of the axis of the thin plates of twin, new phases and other variations in defective structures. The technique makes it possible to solve several complex, urgent problems related to the calculation of X-ray diffraction for crystals with face-centered lattices containing different types of stacking faults. At the same time, special attention was paid to the correlations between the relative positions of faults. The calculations showed that the proposed method can help to determine the nature and structure of stacking faults by identifying the partial and vertex dislocations limiting them in twin crystals with a face-centered cubic structure of silicon carbide based on X-ray diffraction analysis. |
| first_indexed | 2024-03-11T06:42:46Z |
| format | Article |
| id | doaj.art-6a2ba5e4d33b4fb1b7656790f1fe14bd |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T06:42:46Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-6a2ba5e4d33b4fb1b7656790f1fe14bd2023-11-17T10:30:01ZengMDPI AGCrystals2073-43522023-03-0113352810.3390/cryst13030528Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide LatticeIgor I. Bosikov0Nikita V. Martyushev1Roman V. Klyuev2Vadim S. Tynchenko3Viktor A. Kukartsev4Svetlana V. Eremeeva5Antonina I. Karlina6Department of Information Technologies and Systems, North Caucasian Institute of Mining and Metallurgy (State Technological University), 44, Nikolaev Str., 362011 Vladikavkaz, RussiaDepartment of Advanced Technologies, Tomsk Polytechnic University, 30, Lenin Ave., 634050 Tomsk, RussiaTechnique and Technology of Mining and Oil and Gas Production Department, Moscow Polytechnic University, 33, B. Semenovskaya Str., 107023 Moscow, RussiaDepartment of Technological Machines and Equipment of Oil and Gas Complex, School of Petroleum and Natural Gas Engineering, Siberian Federal University, 660041 Krasnoyarsk, RussiaDepartment of Materials Science and Materials Processing Technology, Polytechnical Institute, Siberian Federal University, 660041 Krasnoyarsk, RussiaLaboratory of Biofuel Compositions, Siberian Federal University, 660041 Krasnoyarsk, RussiaResearch and testing center "MGSU STROY-TEST", Moscow State University of Civil Engineering, 107023 Moscow, RussiaX-ray diffraction analysis is essential in studying stacking faults. Most of the techniques used for this purpose are based on theoretical studies. These studies suggest that the observed diffraction patterns are caused by random stacking faults in crystals. In reality, however, the condition of randomness for stacking faults may be violated. The purpose of the study was to develop a technique that can be used to calculate the diffraction effects of the axis of the thin plates of twin, new phases, as well as other variations in defective structures. Materials and methods. This was achieved through modern X-ray diffraction methods using differential equations (transformations and Fourier transforms) and the construction of the Ewald sphere, mathematical analysis, mathematical logic, and mathematical modeling (complex Markov chain). Conclusion. The study made it possible to develop a technique for the calculation of the diffraction effects of the axis of the thin plates of twin, new phases and other variations in defective structures. The technique makes it possible to solve several complex, urgent problems related to the calculation of X-ray diffraction for crystals with face-centered lattices containing different types of stacking faults. At the same time, special attention was paid to the correlations between the relative positions of faults. The calculations showed that the proposed method can help to determine the nature and structure of stacking faults by identifying the partial and vertex dislocations limiting them in twin crystals with a face-centered cubic structure of silicon carbide based on X-ray diffraction analysis.https://www.mdpi.com/2073-4352/13/3/528X-ray diffractioncrystals with a face-centered latticeX-ray structural analysiswave amplitudemulti-layer stacking faultsolid amorphous bodies |
| spellingShingle | Igor I. Bosikov Nikita V. Martyushev Roman V. Klyuev Vadim S. Tynchenko Viktor A. Kukartsev Svetlana V. Eremeeva Antonina I. Karlina Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice Crystals X-ray diffraction crystals with a face-centered lattice X-ray structural analysis wave amplitude multi-layer stacking fault solid amorphous bodies |
| title | Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice |
| title_full | Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice |
| title_fullStr | Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice |
| title_full_unstemmed | Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice |
| title_short | Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice |
| title_sort | complex assessment of x ray diffraction in crystals with face centered silicon carbide lattice |
| topic | X-ray diffraction crystals with a face-centered lattice X-ray structural analysis wave amplitude multi-layer stacking fault solid amorphous bodies |
| url | https://www.mdpi.com/2073-4352/13/3/528 |
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