Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice
X-ray diffraction analysis is essential in studying stacking faults. Most of the techniques used for this purpose are based on theoretical studies. These studies suggest that the observed diffraction patterns are caused by random stacking faults in crystals. In reality, however, the condition of ran...
Main Authors: | Igor I. Bosikov, Nikita V. Martyushev, Roman V. Klyuev, Vadim S. Tynchenko, Viktor A. Kukartsev, Svetlana V. Eremeeva, Antonina I. Karlina |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-03-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/13/3/528 |
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