Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing

Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing

Logic-in-memory (LIM) circuits based on the material implication logic (IMPLY) and resistive random access memory (RRAM) technologies are a candidate solution for the development of ultra-low power non-von Neumann computing architectures. Such architectures could enable the energy-efficient implemen...

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Bibliographic Details
Main Authors: Tommaso Zanotti, Paolo Pavan, Francesco Maria Puglisi
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Micromachines
Subjects:
implication logic
logic-in-memory
memristor
Boolean algebra
RRAM
BNN
Online Access:https://www.mdpi.com/2072-666X/12/10/1243

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https://www.mdpi.com/2072-666X/12/10/1243

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