Direct barrier evaluation method for SiC devices with junction barrier Schottky structures demonstrated with quasi-continuous spacing variation
Junction barrier Schottky (JBS) structures are extensively used in silicon carbide devices; however, the complex surface composition makes the direct barrier evaluation difficult. To exclude the field-dependent distortion on a barrier for a direct unbiased evaluation in JBS structures, this work pro...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0100828 |