Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H<sub>3</sub>PO<sub>4</sub>-Based Etchant

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN cr...

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Bibliographic Details
Main Authors: Wen-Yang Hsu, Yuan-Chi Lian, Pei-Yu Wu, Wei-Min Yong, Jinn-Kong Sheu, Kun-Lin Lin, YewChung Sermon Wu
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/9/12/622