Structure and morphology of CrSi<sub>2</sub> layers formed by rapid thermal treatment
The formation of chromium disilicide layers on n-type single crystal silicon substrates (111) during rapid thermal annealing in heat balance mode by the methods of Rutherford backscattering, X-ray diffraction and transmission electron microscopy of cross sections was investigated. Chromium films of...
| Հիմնական հեղինակներ: | , , |
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| Ձևաչափ: | Հոդված |
| Լեզու: | Russian |
| Հրապարակվել է: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2020-06-01
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| Շարք: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Խորագրեր: | |
| Առցանց հասանելիություն: | https://doklady.bsuir.by/jour/article/view/2656 |