The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire

Ge<sub>1−x</sub>Sn<sub>x</sub> growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge<sub>1−x</sub>Sn<sub>x</sub&g...

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Bibliographic Details
Main Authors: Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/14/5/414