The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire
Ge<sub>1−x</sub>Sn<sub>x</sub> growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge<sub>1−x</sub>Sn<sub>x</sub&g...
Main Authors: | , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2024-04-01
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Series: | Crystals |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4352/14/5/414 |