Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide
<p><span lang="EN-US">Reactive sputter processes frequently exhibit stability problems. The cause of this is that these processes normally exhibit hysteresis effects in the processing curves. Eliminating or decreasing the hysteresis would significantly simplify the use of react...
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| Format: | Article |
| Language: | English |
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Kaunas University of Technology
2016-05-01
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| Series: | Medžiagotyra |
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| Online Access: | http://matsc.ktu.lt/index.php/MatSc/article/view/7569 |
| _version_ | 1817985087177752576 |
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| author | He YU Tao WANG Xiang DONG Yadong JIANG Roland WU |
| author_facet | He YU Tao WANG Xiang DONG Yadong JIANG Roland WU |
| author_sort | He YU |
| collection | DOAJ |
| description | <p><span lang="EN-US">Reactive sputter processes frequently exhibit stability problems. The cause of this is that these processes normally exhibit hysteresis effects in the processing curves. Eliminating or decreasing the hysteresis would significantly simplify the use of reactive sputtering processes. In this work, we present reactive sputtering deposition modeling of vanadium oxide with a revolutionary substrate, aiming to study the influence of it on hysteresis effect. Based on this modeling, the fractions of V, V<sub>2</sub>O<sub>3</sub>, VO<sub>2</sub>, V<sub>2</sub>O<sub>5</sub> at the target surface and target voltage have been investigated as a function of reactive gas flow during the reactive sputtering. </span><span lang="EN-US">The substrate area was replaced by a new parameter of effective area of substrate A<sub>s </sub>which was </span><span lang="EN-GB">calculated as a sum of contributions from the substrate area at each cell of time</span><span lang="EN-US">. </span><span lang="EN-US">From the modeling results, it is suggested that the effective area of the substrate was reduced for reactive sputtering with revolutionary substrate, thus the hysteresis width would be decreased. This has been experimentally verified by reactive sputtering deposition of VO<sub>x</sub>. Besides, the fundamental explanation to this behavior as well as the experimental verification is presented.</span></p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.22.1.7569">http://dx.doi.org/10.5755/j01.ms.22.1.7569</a></p> |
| first_indexed | 2024-04-13T23:53:45Z |
| format | Article |
| id | doaj.art-6b005eb7dcb249dcb3a1dba7b946e236 |
| institution | Directory Open Access Journal |
| issn | 1392-1320 2029-7289 |
| language | English |
| last_indexed | 2024-04-13T23:53:45Z |
| publishDate | 2016-05-01 |
| publisher | Kaunas University of Technology |
| record_format | Article |
| series | Medžiagotyra |
| spelling | doaj.art-6b005eb7dcb249dcb3a1dba7b946e2362022-12-22T02:24:00ZengKaunas University of TechnologyMedžiagotyra1392-13202029-72892016-05-01221111410.5755/j01.ms.22.1.75696736Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium OxideHe YUTao WANGXiang DONGYadong JIANGRoland WU<p><span lang="EN-US">Reactive sputter processes frequently exhibit stability problems. The cause of this is that these processes normally exhibit hysteresis effects in the processing curves. Eliminating or decreasing the hysteresis would significantly simplify the use of reactive sputtering processes. In this work, we present reactive sputtering deposition modeling of vanadium oxide with a revolutionary substrate, aiming to study the influence of it on hysteresis effect. Based on this modeling, the fractions of V, V<sub>2</sub>O<sub>3</sub>, VO<sub>2</sub>, V<sub>2</sub>O<sub>5</sub> at the target surface and target voltage have been investigated as a function of reactive gas flow during the reactive sputtering. </span><span lang="EN-US">The substrate area was replaced by a new parameter of effective area of substrate A<sub>s </sub>which was </span><span lang="EN-GB">calculated as a sum of contributions from the substrate area at each cell of time</span><span lang="EN-US">. </span><span lang="EN-US">From the modeling results, it is suggested that the effective area of the substrate was reduced for reactive sputtering with revolutionary substrate, thus the hysteresis width would be decreased. This has been experimentally verified by reactive sputtering deposition of VO<sub>x</sub>. Besides, the fundamental explanation to this behavior as well as the experimental verification is presented.</span></p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.22.1.7569">http://dx.doi.org/10.5755/j01.ms.22.1.7569</a></p>http://matsc.ktu.lt/index.php/MatSc/article/view/7569reactive sputtering, modeling, hysteresis effect, revolutionary substrate |
| spellingShingle | He YU Tao WANG Xiang DONG Yadong JIANG Roland WU Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide Medžiagotyra reactive sputtering, modeling, hysteresis effect, revolutionary substrate |
| title | Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide |
| title_full | Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide |
| title_fullStr | Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide |
| title_full_unstemmed | Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide |
| title_short | Influence of a Revolutionary Substrate on Hysteresis Effect in Reactive Sputtering Deposition of Vanadium Oxide |
| title_sort | influence of a revolutionary substrate on hysteresis effect in reactive sputtering deposition of vanadium oxide |
| topic | reactive sputtering, modeling, hysteresis effect, revolutionary substrate |
| url | http://matsc.ktu.lt/index.php/MatSc/article/view/7569 |
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