Recent Progress in Source/Drain Ohmic Contact with β-Ga<sub>2</sub>O<sub>3</sub>

Recent Progress in Source/Drain Ohmic Contact with β-Ga<sub>2</sub>O<sub>3</sub>

β-Ga<sub>2</sub>O<sub>3</sub>, with excellent bandgap, breakdown field, and thermal stability properties, is considered to be one of the most promising candidates for power devices including field-effect transistors (FETs) and for other applications such as Schottky barrier d...

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Bibliographic Details
Main Authors: Lin-Qing Zhang, Wan-Qing Miao, Xiao-Li Wu, Jing-Yi Ding, Shao-Yong Qin, Jia-Jia Liu, Ya-Ting Tian, Zhi-Yan Wu, Yan Zhang, Qian Xing, Peng-Fei Wang
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Inorganics
Subjects:
β-Ga<sub>2</sub>O<sub>3</sub>
Ohmic contact
ion implantation
interface
annealing temperature
Online Access:https://www.mdpi.com/2304-6740/11/10/397

Internet

https://www.mdpi.com/2304-6740/11/10/397

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