Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays
A top‐down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi‐supporting layers to realize large‐scale transfer processes on transition metal dichalcogenide materials. A 2‐inch MoS2 thin film transferred on SiO2/Si substrates...
| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-02-01
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| Series: | Small Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/smsc.202300144 |
| _version_ | 1797306802083201024 |
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| author | Ying-Chun Shen Bang-Kai Wu Tsung-Shun Tsai Mingjin Liu Jyun-Hong Chen Tzu-Yi Yang Ruei-Hong Cyu Chieh-Ting Chen Yu-Chieh Hsu Chai-Hung Luo Yu-Qi Huang Yu-Ren Peng Chang-Hong Shen Yen-Fu Lin Po-Wen Chiu Ya-Chin King Yu-Lun Chueh |
| author_facet | Ying-Chun Shen Bang-Kai Wu Tsung-Shun Tsai Mingjin Liu Jyun-Hong Chen Tzu-Yi Yang Ruei-Hong Cyu Chieh-Ting Chen Yu-Chieh Hsu Chai-Hung Luo Yu-Qi Huang Yu-Ren Peng Chang-Hong Shen Yen-Fu Lin Po-Wen Chiu Ya-Chin King Yu-Lun Chueh |
| author_sort | Ying-Chun Shen |
| collection | DOAJ |
| description | A top‐down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi‐supporting layers to realize large‐scale transfer processes on transition metal dichalcogenide materials. A 2‐inch MoS2 thin film transferred on SiO2/Si substrates with high integrity and a yield of ≈99% can be successfully achieved via the proposed process. MoS2‐based transistors with a transferred Au thin film as the contact electrode indicate a lower contact resistance of 8.4 kΩ with improved mobility and a higher on/off ratio compared with that of the MoS2‐based transistors with the evaporated Au thin film as the contact electrode. By applying the difference in adhesion force between metal oxides and metal on MoS2 and PMMA surfaces, the selective transfer of MoS2 films can be demonstrated. Furthermore, all‐transferred MoS2‐based transistor arrays are demonstrated by combining the selectively transferred MoS2 film as the channel material and the transferred Au thin films as the contact electrode, which results in uniform electrical properties featuring a carrier mobility of 10.45 cm2 V−1 s−1, a subthreshold swing of 203.94 mV dec−1, a normalized Ion of 8.3 μA μm−1, and an on/off ratio of 105. |
| first_indexed | 2024-03-08T00:47:05Z |
| format | Article |
| id | doaj.art-6b2b122fd0cc4bc890c37faa68f3a2b0 |
| institution | Directory Open Access Journal |
| issn | 2688-4046 |
| language | English |
| last_indexed | 2024-03-08T00:47:05Z |
| publishDate | 2024-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Science |
| spelling | doaj.art-6b2b122fd0cc4bc890c37faa68f3a2b02024-02-15T05:52:51ZengWiley-VCHSmall Science2688-40462024-02-0142n/an/a10.1002/smsc.202300144Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor ArraysYing-Chun Shen0Bang-Kai Wu1Tsung-Shun Tsai2Mingjin Liu3Jyun-Hong Chen4Tzu-Yi Yang5Ruei-Hong Cyu6Chieh-Ting Chen7Yu-Chieh Hsu8Chai-Hung Luo9Yu-Qi Huang10Yu-Ren Peng11Chang-Hong Shen12Yen-Fu Lin13Po-Wen Chiu14Ya-Chin King15Yu-Lun Chueh16Department of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanNational Applied Research Laboratories Taiwan Semiconductor Research Institute Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanNational Applied Research Laboratories Taiwan Semiconductor Research Institute Hsinchu 30013 TaiwanDepartment of Physics National Chung Hsing University Taichung 40227 TaiwanInstitute of Electronics Engineering National Tsing Hua University Hsinchu 30013 TaiwanInstitute of Electronics Engineering National Tsing Hua University Hsinchu 30013 TaiwanDepartment of Materials Science and Engineering National Tsing-Hua University Hsinchu 30013 TaiwanA top‐down transfer process is developed via a rolling process associated with thermal release tape/poly(methyl methacrylate) (PMMA) bi‐supporting layers to realize large‐scale transfer processes on transition metal dichalcogenide materials. A 2‐inch MoS2 thin film transferred on SiO2/Si substrates with high integrity and a yield of ≈99% can be successfully achieved via the proposed process. MoS2‐based transistors with a transferred Au thin film as the contact electrode indicate a lower contact resistance of 8.4 kΩ with improved mobility and a higher on/off ratio compared with that of the MoS2‐based transistors with the evaporated Au thin film as the contact electrode. By applying the difference in adhesion force between metal oxides and metal on MoS2 and PMMA surfaces, the selective transfer of MoS2 films can be demonstrated. Furthermore, all‐transferred MoS2‐based transistor arrays are demonstrated by combining the selectively transferred MoS2 film as the channel material and the transferred Au thin films as the contact electrode, which results in uniform electrical properties featuring a carrier mobility of 10.45 cm2 V−1 s−1, a subthreshold swing of 203.94 mV dec−1, a normalized Ion of 8.3 μA μm−1, and an on/off ratio of 105.https://doi.org/10.1002/smsc.202300144electrode transferlarge-scale transfersselective transfertop-down transfertransition metal dichalcogenides materials |
| spellingShingle | Ying-Chun Shen Bang-Kai Wu Tsung-Shun Tsai Mingjin Liu Jyun-Hong Chen Tzu-Yi Yang Ruei-Hong Cyu Chieh-Ting Chen Yu-Chieh Hsu Chai-Hung Luo Yu-Qi Huang Yu-Ren Peng Chang-Hong Shen Yen-Fu Lin Po-Wen Chiu Ya-Chin King Yu-Lun Chueh Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays Small Science electrode transfer large-scale transfers selective transfer top-down transfer transition metal dichalcogenides materials |
| title | Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays |
| title_full | Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays |
| title_fullStr | Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays |
| title_full_unstemmed | Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays |
| title_short | Design of Versatile Top‐Down Transfer by Thermal Release Tape/Poly(methyl methacrylate) (TRT/PMMA) Bi‐Supporting Layers Toward All‐Transfer Transition Metal Dichalcogenide Material Based Transistor Arrays |
| title_sort | design of versatile top down transfer by thermal release tape poly methyl methacrylate trt pmma bi supporting layers toward all transfer transition metal dichalcogenide material based transistor arrays |
| topic | electrode transfer large-scale transfers selective transfer top-down transfer transition metal dichalcogenides materials |
| url | https://doi.org/10.1002/smsc.202300144 |
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