Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications
This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpo...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
|
| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/13/10/1583 |
| _version_ | 1797598844217720832 |
|---|---|
| author | Roman V. Tominov Zakhar E. Vakulov Vadim I. Avilov Ivan A. Shikhovtsov Vadim I. Varganov Victor B. Kazantsev Lovi Raj Gupta Chander Prakash Vladimir A. Smirnov |
| author_facet | Roman V. Tominov Zakhar E. Vakulov Vadim I. Avilov Ivan A. Shikhovtsov Vadim I. Varganov Victor B. Kazantsev Lovi Raj Gupta Chander Prakash Vladimir A. Smirnov |
| author_sort | Roman V. Tominov |
| collection | DOAJ |
| description | This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, U<i><sub>SET</sub></i>, and I<i><sub>LRS</sub></i> are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10<sup>−10</sup> A to (4.2 ± 0.6) × 10<sup>−9</sup> A, respectively. Furthermore, the HRS/LRS ratio and U<i><sub>SET</sub></i> are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems. |
| first_indexed | 2024-03-11T03:26:28Z |
| format | Article |
| id | doaj.art-6b71fc660ee9446abbdbf392eb061f83 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T03:26:28Z |
| publishDate | 2023-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-6b71fc660ee9446abbdbf392eb061f832023-11-18T02:41:50ZengMDPI AGNanomaterials2079-49912023-05-011310158310.3390/nano13101583Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic ApplicationsRoman V. Tominov0Zakhar E. Vakulov1Vadim I. Avilov2Ivan A. Shikhovtsov3Vadim I. Varganov4Victor B. Kazantsev5Lovi Raj Gupta6Chander Prakash7Vladimir A. Smirnov8Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaResearch Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, RussiaThis paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, U<i><sub>SET</sub></i>, and I<i><sub>LRS</sub></i> are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10<sup>−10</sup> A to (4.2 ± 0.6) × 10<sup>−9</sup> A, respectively. Furthermore, the HRS/LRS ratio and U<i><sub>SET</sub></i> are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems.https://www.mdpi.com/2079-4991/13/10/1583artificial intelligenceneuromorphic systemsmemristorReRAMresistive switchingscratching probe nanolithography |
| spellingShingle | Roman V. Tominov Zakhar E. Vakulov Vadim I. Avilov Ivan A. Shikhovtsov Vadim I. Varganov Victor B. Kazantsev Lovi Raj Gupta Chander Prakash Vladimir A. Smirnov Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications Nanomaterials artificial intelligence neuromorphic systems memristor ReRAM resistive switching scratching probe nanolithography |
| title | Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications |
| title_full | Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications |
| title_fullStr | Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications |
| title_full_unstemmed | Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications |
| title_short | Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications |
| title_sort | approaches for memristive structures using scratching probe nanolithography towards neuromorphic applications |
| topic | artificial intelligence neuromorphic systems memristor ReRAM resistive switching scratching probe nanolithography |
| url | https://www.mdpi.com/2079-4991/13/10/1583 |
| work_keys_str_mv | AT romanvtominov approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications AT zakharevakulov approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications AT vadimiavilov approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications AT ivanashikhovtsov approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications AT vadimivarganov approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications AT victorbkazantsev approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications AT lovirajgupta approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications AT chanderprakash approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications AT vladimirasmirnov approachesformemristivestructuresusingscratchingprobenanolithographytowardsneuromorphicapplications |