Data-cell-variation-tolerant triple sampling non-destructive self-reference sensing scheme of STT-MRAM
Inevitable process variations (PVT) brought by both the magnetic tunneling junction (MTJ) and MOSFET based on the complementary metal-oxide semiconductor (CMOS) technology become a major obstacle for the mass production of spin transfer torque magnetic random access memory (STT-MRAM). The detriment...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/9.0000664 |