Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions

Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF<sub>4</sub> Based Process Conditions

Hydrogenated microcrystalline silicon (µc-Si:H) and epitaxial silicon (epi-Si) films have been produced from SiF<sub>4</sub>, H<sub>2</sub> and Ar mixtures by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. Here, both films were produced using identical depositio...

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Bibliographic Details
Main Authors: Mario Moreno, Arturo Ponce, Arturo Galindo, Eduardo Ortega, Alfredo Morales, Javier Flores, Roberto Ambrosio, Alfonso Torres, Luis Hernandez, Hector Vazquez-Leal, Gilles Patriarche, Pere Roca i Cabarrocas
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Materials
Subjects:
microcrystalline silicon
epitaxial growth
plasma enhanced chemical vapor deposition
electron microscopy
Online Access:https://www.mdpi.com/1996-1944/14/22/6947

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https://www.mdpi.com/1996-1944/14/22/6947

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