High current density 1.2 kV class HfO2-gated vertical GaN trench MOSFETs
This work reports on high current density 1.2 kV class HfO _2 -gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An output current density of 330 mA mm ^−1 is reported at a drain bias of five volts, which, to our knowledge, is over ten-times the highest reported...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2024-01-01
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| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/ad85c1 |
| Summary: | This work reports on high current density 1.2 kV class HfO _2 -gated vertical GaN trench metal-oxide-semiconductor field-effect transistors (MOSFETs). An output current density of 330 mA mm ^−1 is reported at a drain bias of five volts, which, to our knowledge, is over ten-times the highest reported values for 1.2 kV class GaN or SiC MOSFETs. This work also showcases a significant achievement in demonstrating substantially thick (100 nm) HfO _2 on GaN with simultaneous low leakage current (0.5 nA at 2 MV cm ^−1 ), a high breakdown strength (5.2 MV cm ^−1 ), and a high recorded dielectric constant (22.0). |
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| ISSN: | 1882-0786 |