Band bending at the surface of Bi2Se3 studied from first principles

The band bending (BB) effect on the surface of the second-generation topological insulators implies a serious challenge to design transport devices. The BB is triggered by the effective electric field generated by charged impurities close to the surface and by the inhomogeneous charge distribution o...

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Bibliographic Details
Main Authors: P Rakyta, B Ujfalussy, L Szunyogh
Format: Article
Language:English
Published: IOP Publishing 2015-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/17/12/123011