Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs
This paper investigates and compares the static performance and short-circuit (SC) robustness of 1200 V SiC MOSFETs with varying JFET widths (W<sub>JFET</sub> = 2.0–5.0 μm). Short-circuit measurements as well as electrical-thermal simulations are used to identify thermal distribution and...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-11-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/23/4849 |