Silicic p–i–n-photodiode with small dark current
The influence of circular metallization of the reverse side of p–i–n-photodiode crystal based on highly ohm silicon on it’s characteristics are explored. The dark current can be decreased by an order, at the same time losses of current monochromatic sensitiveness on a wave-length 1,06 mkm do not exc...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2011-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/english/tkea/2011/3_2011/st_08.htm |