Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
In this paper, we introduce a new type of AlGaN/GaN high electron mobility transistor (HEMT) with microfield plate (FP). We use Silvaco-ATLAS two-dimensional numerical simulation to calculate the performance of conventional HEMT and HEMT with micro-FP and analyze its principle. By studying a new cha...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-10-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/11/1318 |