Impact of the oxidation temperature on the density of single-photon sources formed at SiO2/SiC interface
The impact of oxidation temperature on the formation of single photon-emitting defects located at the silicon dioxide (SiO2)/silicon carbide (SiC) interface was investigated. Thermal oxidation was performed in the temperature range between 900 and 1300 °C. After oxidation, two different cooling proc...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-09-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0162610 |