Improving the thermal properties of the device in the process of forming a contact with the collector region of a silicon transistor
Objective. The objective of the study is to increase the reliability of the contact of the semiconductor transistor crystal to the body and the reproducibility of the technological process.Method. A method for obtaining multilayer metallization of the reverse side of the crystal has been developed a...
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Dagestan State Technical University
2022-11-01
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| Series: | Вестник Дагестанского государственного технического университета: Технические науки |
| Subjects: | |
| Online Access: | https://vestnik.dgtu.ru/jour/article/view/1116 |