A Curvature Compensation Technique for Low-Voltage Bandgap Reference
Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient cu...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-11-01
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Series: | Energies |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1073/14/21/7193 |