Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films
Since the transfer process of graphene from a dedicated growth substrate to another substrate is prone to induce defects and contamination and can increase costs, there is a large interest in methods for growing graphene directly on silicon wafers. Here, we demonstrate the direct CVD growth of graph...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-05-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/15/10/3723 |
| _version_ | 1797498191290040320 |
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| author | Yelena Hagendoorn Gregory Pandraud Sten Vollebregt Bruno Morana Pasqualina M. Sarro Peter G. Steeneken |
| author_facet | Yelena Hagendoorn Gregory Pandraud Sten Vollebregt Bruno Morana Pasqualina M. Sarro Peter G. Steeneken |
| author_sort | Yelena Hagendoorn |
| collection | DOAJ |
| description | Since the transfer process of graphene from a dedicated growth substrate to another substrate is prone to induce defects and contamination and can increase costs, there is a large interest in methods for growing graphene directly on silicon wafers. Here, we demonstrate the direct CVD growth of graphene on a SiO<sub>2</sub> layer on a silicon wafer by employing a Pt thin film as catalyst. We pattern the platinum film, after which a CVD graphene layer is grown at the interface between the SiO<sub>2</sub> and the Pt. After removing the Pt, Raman spectroscopy demonstrates the local growth of monolayer graphene on SiO<sub>2</sub>. By tuning the CVD process, we were able to fully cover 4-inch oxidized silicon wafers with transfer-free monolayer graphene, a result that is not easily obtained using other methods. By adding Ta structures, local graphene growth on SiO<sub>2</sub> is selectively blocked, allowing the controlled graphene growth on areas selected by mask design. |
| first_indexed | 2024-03-10T03:29:55Z |
| format | Article |
| id | doaj.art-6c8f93508cca4f948b848d90fb3313bc |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T03:29:55Z |
| publishDate | 2022-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-6c8f93508cca4f948b848d90fb3313bc2023-11-23T11:59:41ZengMDPI AGMaterials1996-19442022-05-011510372310.3390/ma15103723Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-FilmsYelena Hagendoorn0Gregory Pandraud1Sten Vollebregt2Bruno Morana3Pasqualina M. Sarro4Peter G. Steeneken5Laboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The NetherlandsLaboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The NetherlandsLaboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The NetherlandsLaboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The NetherlandsLaboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The NetherlandsPrecision and Microsystems Engineering Department, Delft University of Technology, 2628 CD Delft, The NetherlandsSince the transfer process of graphene from a dedicated growth substrate to another substrate is prone to induce defects and contamination and can increase costs, there is a large interest in methods for growing graphene directly on silicon wafers. Here, we demonstrate the direct CVD growth of graphene on a SiO<sub>2</sub> layer on a silicon wafer by employing a Pt thin film as catalyst. We pattern the platinum film, after which a CVD graphene layer is grown at the interface between the SiO<sub>2</sub> and the Pt. After removing the Pt, Raman spectroscopy demonstrates the local growth of monolayer graphene on SiO<sub>2</sub>. By tuning the CVD process, we were able to fully cover 4-inch oxidized silicon wafers with transfer-free monolayer graphene, a result that is not easily obtained using other methods. By adding Ta structures, local graphene growth on SiO<sub>2</sub> is selectively blocked, allowing the controlled graphene growth on areas selected by mask design.https://www.mdpi.com/1996-1944/15/10/3723graphene synthesisCVDnanofabricationthin filmssilicon technology |
| spellingShingle | Yelena Hagendoorn Gregory Pandraud Sten Vollebregt Bruno Morana Pasqualina M. Sarro Peter G. Steeneken Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films Materials graphene synthesis CVD nanofabrication thin films silicon technology |
| title | Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films |
| title_full | Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films |
| title_fullStr | Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films |
| title_full_unstemmed | Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films |
| title_short | Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films |
| title_sort | direct wafer scale cvd graphene growth under platinum thin films |
| topic | graphene synthesis CVD nanofabrication thin films silicon technology |
| url | https://www.mdpi.com/1996-1944/15/10/3723 |
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