Integrated SiGe Detectors for Si Photonic Sensor Platforms

Integrated SiGe Detectors for Si Photonic Sensor Platforms

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों:	Grégory Pandraud, Silvana Milosavljevic, Amir Sammak, Matteo Cherchi, Aleksandar Jovic, Pasqualina Sarro
स्वरूप:	लेख
भाषा:	English
प्रकाशित:	MDPI AG 2017-08-01
श्रृंखला:	Proceedings
विषय:	Si photonics SiGe detectors optical coherence tomography
ऑनलाइन पहुंच:	https://www.mdpi.com/2504-3900/1/4/559

समान संसाधन

SiGe field effect transistors
द्वारा: Terrence E. Whall, और अन्य
प्रकाशित: (2001-03-01)

CVD growth of high speed SiGe HBTs using SiH4
द्वारा: Henry H. Radamson, और अन्य
प्रकाशित: (2000-12-01)

Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art
द्वारा: You Li, और अन्य
प्रकाशित: (2021-03-01)

SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
द्वारा: Cheng, Zhiyuan, और अन्य
प्रकाशित: (2003)

MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
द्वारा: Fitzgerald, Eugene A., और अन्य
प्रकाशित: (2003)

SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
द्वारा: Cheng, Zhiyuan, और अन्य
प्रकाशित: (2003)

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
द्वारा: Loh Ter-Hoe, और अन्य
प्रकाशित: (2007-01-01)

FDTD analysis of direct optical integration between SiNx waveguides and Ge/SiGe multiple quantum wells on graded buffer for low-voltage optical modulators around the O-band wavelength
द्वारा: Inthanee Thongyim, और अन्य
प्रकाशित: (2024-02-01)

SiGe bandgap tuning for high speed eam
द्वारा: Mastronardi, Lorenzo, और अन्य
प्रकाशित: (2019)

SiGe/Si Multi-Quantum-Well Micro-Bolometer Array Design and Fabrication with Heterogeneous Integration
द्वारा: Zhong Fang, और अन्य
प्रकाशित: (2021-12-01)

Gate-stack engineering for self-organized Ge-dot/SiO2/SiGe-shell MOS capacitors
द्वारा: Wei-Ting eLai, और अन्य
प्रकाशित: (2016-02-01)

Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
द्वारा: Yongliang Li, और अन्य
प्रकाशित: (2021-06-01)

The main characteristics of SiGe HBTs at low temperatures
द्वारा: О. V. Dvornikov, और अन्य
प्रकाशित: (2016-09-01)

The Design, Fabrication and Characterization of Grating Couplers for SiGe Photonic Integration Employing a Reflective Back Mirror
द्वारा: Qiang Huang, और अन्य
प्रकाशित: (2022-10-01)

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands
द्वारा: Brehm M, और अन्य
प्रकाशित: (2010-01-01)

Novel Si/SiGe fin on insulator fabrication on bulk-Si substrate
द्वारा: Yongliang Li, और अन्य
प्रकाशित: (2021-01-01)

275 GHz Quadrature Receivers for THz-Band 6G Indoor Network in 130-nm SiGe Technology
द्वारा: Jeong-Moon Song, और अन्य
प्रकाशित: (2023-01-01)

Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base
द्वारा: Agnieszka Zaręba, और अन्य
प्रकाशित: (2023-06-01)

High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET
द्वारा: Yi-Ju Yao, और अन्य
प्रकाशित: (2023-04-01)

Performance Analysis and Simulation of c-Si/SiGe Based Solar Cell
द्वारा: Tarek Shawky, और अन्य
प्रकाशित: (2021-01-01)

SiGe HBT wideband amplifier for millimeter wave applications
द्वारा: Marco Krˇcmar, और अन्य
प्रकाशित: (2023-06-01)

Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K
द्वारा: Abel Garcia-Barrientos, और अन्य
प्रकाशित: (2023-09-01)

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process
द्वारा: Peigen Zhou, और अन्य
प्रकाशित: (2023-12-01)

Critical modeling issues of SiGe semiconductor devices
द्वारा: Vassil Palankovski, और अन्य
प्रकाशित: (2004-03-01)

Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface
द्वारा: Bollani Monica, और अन्य
प्रकाशित: (2010-01-01)

The numerical investigations of SiGe/Si heterojunction electro-optic modulator in mid-infrared
द्वारा: Song Feng, और अन्य
प्रकाशित: (2022-11-01)

Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology
द्वारा: Wei Qidi, और अन्य
प्रकाशित: (2018-07-01)

Formation Mechanism of Rounded SiGe-Etch Front in Isotropic SiGe Plasma Etching for Gate-All-Around FETs
द्वारा: Yu Zhao, और अन्य
प्रकाशित: (2021-01-01)

Linear and nonlinear optical properties of dewetted SiGe islands
द्वारा: Luca Fagiani, और अन्य
प्रकाशित: (2022-01-01)

Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots
द्वारा: Cui Jian, और अन्य
प्रकाशित: (2011-01-01)

Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators
द्वारा: Luis Fonseca, और अन्य
प्रकाशित: (2021-02-01)

Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography
द्वारा: Merdzhanova T, और अन्य
प्रकाशित: (2009-01-01)

Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review
द्वारा: Kaoru Toko, और अन्य
प्रकाशित: (2024-07-01)

Transient Electrical and Optical Characteristics of Electron and Proton Irradiated SiGe Detectors
द्वारा: Tomas Ceponis, और अन्य
प्रकाशित: (2020-12-01)

Investigation of thermal stability of Si0.7Ge0.3Si stacked multilayer with As ion-implantation
द्वारा: Yanrong Wang, और अन्य
प्रकाशित: (2021-01-01)

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer
द्वारा: Isaacson, David M., और अन्य
प्रकाशित: (2004)

Nanogrids and Beehive-Like Nanostructures Formed by Plasma Etching the Self-Organized SiGe Islands
द्वारा: Juang Jenh-Yih, और अन्य
प्रकाशित: (2010-01-01)

Characterization of Mn<sub>5</sub>Ge<sub>3</sub> Contacts on a Shallow Ge/SiGe Heterostructure
द्वारा: Troy A. Hutchins-Delgado, और अन्य
प्रकाशित: (2024-03-01)

4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process
द्वारा: Xiaohong Cheng, और अन्य
प्रकाशित: (2022-03-01)

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
द्वारा: Ferragut R, और अन्य
प्रकाशित: (2010-01-01)