Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO<sub>2</sub> Thin Films towards General Parameters to Engineer the Ferroelectricity

Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO<sub>2</sub> Thin Films towards General Parameters to Engineer the Ferroelectricity

Many factors have been confirmed to affect ferroelectric phase formation in HfO<sub>2</sub>-based thin films but there was still a lack of general view on describing them. This paper discusses the intrinsic parameters to stabilize the ferroelectric phase of HfO<sub>2</sub> th...

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Bibliographic Details
Main Authors: Tianning Cui, Liping Zhu, Danyang Chen, Yuyan Fan, Jingquan Liu, Xiuyan Li
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Electronics
Subjects:
ferroelectricity engineering
HfO<sub>2</sub>
impactor factors
general parameters
Online Access:https://www.mdpi.com/2079-9292/11/15/2369

Internet

https://www.mdpi.com/2079-9292/11/15/2369

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