Improved I<sub>on</sub>/I<sub>off</sub> Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al<sub>0.5</sub>GaN Etch-Stop Layer

Improved I<sub>on</sub>/I<sub>off</sub> Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al<sub>0.5</sub>GaN Etch-Stop Layer

In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al<sub>0.5</sub>GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al<sub>0.5</sub>GaN etch-stop layer not only reduced lattice defects but enge...

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Bibliographic Details
Main Authors: Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Min-Hung Shih, Hsien-Chin Chiu, Hsuan-Ling Kao, Xinke Liu
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Materials
Subjects:
etch-stop layer
high selectivity ratio
normally off
p-GaN gate HEMT
Online Access:https://www.mdpi.com/1996-1944/15/10/3503

Internet

https://www.mdpi.com/1996-1944/15/10/3503

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