Proton irradiation induced defects in β-Ga2O3: A combined EPR and theory study

Proton irradiation of both n-type and semi-insulating bulk samples of β-Ga2O3 leads to the formation of two paramagnetic defects with spin S = 1/2 and monoclinic point symmetry. Their high introduction rates indicate them to be primary irradiation induced defects. The first electron spin resonance (...

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Bibliographic Details
Main Authors: Hans Jürgen von Bardeleben, Shengqiang Zhou, Uwe Gerstmann, Dmitry Skachkov, Walter R. L. Lambrecht, Quoc Duy Ho, Peter Deák
Format: Article
Language:English
Published: AIP Publishing LLC 2019-02-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5053158