Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering

Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering

The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga<sub>2</sub>O<sub>3</sub> demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivit...

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Bibliographic Details
Main Authors: Hee-Jae Lee, Geon-Hee Lee, Seung-Hwan Chung, Dong-Wook Byun, Michael A. Schweitz, Dae Hwan Chun, Nack Yong Joo, Minwho Lim, Tobias Erlbacher, Sang-Mo Koo
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Micro
Subjects:
gallium oxide
heterostructure
wide bandgap
transistor
aluminum oxide
semiconductor
Online Access:https://www.mdpi.com/2673-8023/3/4/55

Internet

https://www.mdpi.com/2673-8023/3/4/55

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