Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga<sub>2</sub>O<sub>3</sub> demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivit...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-09-01
|
| Series: | Micro |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-8023/3/4/55 |
| _version_ | 1827574133279424512 |
|---|---|
| author | Hee-Jae Lee Geon-Hee Lee Seung-Hwan Chung Dong-Wook Byun Michael A. Schweitz Dae Hwan Chun Nack Yong Joo Minwho Lim Tobias Erlbacher Sang-Mo Koo |
| author_facet | Hee-Jae Lee Geon-Hee Lee Seung-Hwan Chung Dong-Wook Byun Michael A. Schweitz Dae Hwan Chun Nack Yong Joo Minwho Lim Tobias Erlbacher Sang-Mo Koo |
| author_sort | Hee-Jae Lee |
| collection | DOAJ |
| description | The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga<sub>2</sub>O<sub>3</sub> demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivity of Ga<sub>2</sub>O<sub>3</sub> is lower than that of other wide-bandgap materials, resulting in the degradation of the electrical performance and reduced reliability of devices. The heterostructure formation on substrates with high thermal conductivity has been noted to facilitate heat dissipation in devices. In this work, Ga<sub>2</sub>O<sub>3</sub> thin films with an Al<sub>2</sub>O<sub>3</sub> interlayer were deposited on SiC substrates by radio frequency sputtering. Post-deposition annealing was performed at 900 °C for 1 h to crystallize the Ga<sub>2</sub>O<sub>3</sub> thin films. The Auger electron spectroscopy depth profiles revealed the interdiffusion of the Ga and Al atoms at the Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub> interface after annealing. The X-ray diffraction (XRD) results displayed improved crystallinity after annealing and adding the Al<sub>2</sub>O<sub>3</sub> interlayer. The crystallite size increased from 5.72 to 8.09 nm as calculated by the Scherrer equation using the full width at half maximum (FWHM). The carrier mobility was enhanced from 5.31 to 28.39 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> in the annealed Ga<sub>2</sub>O<sub>3</sub> thin films on Al<sub>2</sub>O<sub>3</sub>/SiC. The transfer and output characteristics of the Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC back-gate transistors reflect the trend of the XRD and Hall measurement results. Therefore, this work demonstrated that the physical and electrical properties of the Ga<sub>2</sub>O<sub>3</sub>/SiC back-gate transistors can be improved by post-deposition annealing and the introduction of an Al<sub>2</sub>O<sub>3</sub> interlayer. |
| first_indexed | 2024-03-08T20:31:57Z |
| format | Article |
| id | doaj.art-6cd7942e5e084d04a99e15c6c2957133 |
| institution | Directory Open Access Journal |
| issn | 2673-8023 |
| language | English |
| last_indexed | 2024-03-08T20:31:57Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micro |
| spelling | doaj.art-6cd7942e5e084d04a99e15c6c29571332023-12-22T14:25:00ZengMDPI AGMicro2673-80232023-09-013477578410.3390/micro3040055Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency SputteringHee-Jae Lee0Geon-Hee Lee1Seung-Hwan Chung2Dong-Wook Byun3Michael A. Schweitz4Dae Hwan Chun5Nack Yong Joo6Minwho Lim7Tobias Erlbacher8Sang-Mo Koo9Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaElectronic Devices Research Team, Hyundai Motor Group, Uiwang-si 16082, Republic of KoreaElectronic Devices Research Team, Hyundai Motor Group, Uiwang-si 16082, Republic of KoreaFraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, GermanyFraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, GermanyDepartment of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of KoreaThe high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga<sub>2</sub>O<sub>3</sub> demonstrate its potential as a next-generation power semiconductor material. However, the thermal conductivity of Ga<sub>2</sub>O<sub>3</sub> is lower than that of other wide-bandgap materials, resulting in the degradation of the electrical performance and reduced reliability of devices. The heterostructure formation on substrates with high thermal conductivity has been noted to facilitate heat dissipation in devices. In this work, Ga<sub>2</sub>O<sub>3</sub> thin films with an Al<sub>2</sub>O<sub>3</sub> interlayer were deposited on SiC substrates by radio frequency sputtering. Post-deposition annealing was performed at 900 °C for 1 h to crystallize the Ga<sub>2</sub>O<sub>3</sub> thin films. The Auger electron spectroscopy depth profiles revealed the interdiffusion of the Ga and Al atoms at the Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub> interface after annealing. The X-ray diffraction (XRD) results displayed improved crystallinity after annealing and adding the Al<sub>2</sub>O<sub>3</sub> interlayer. The crystallite size increased from 5.72 to 8.09 nm as calculated by the Scherrer equation using the full width at half maximum (FWHM). The carrier mobility was enhanced from 5.31 to 28.39 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> in the annealed Ga<sub>2</sub>O<sub>3</sub> thin films on Al<sub>2</sub>O<sub>3</sub>/SiC. The transfer and output characteristics of the Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC back-gate transistors reflect the trend of the XRD and Hall measurement results. Therefore, this work demonstrated that the physical and electrical properties of the Ga<sub>2</sub>O<sub>3</sub>/SiC back-gate transistors can be improved by post-deposition annealing and the introduction of an Al<sub>2</sub>O<sub>3</sub> interlayer.https://www.mdpi.com/2673-8023/3/4/55gallium oxideheterostructurewide bandgaptransistoraluminum oxidesemiconductor |
| spellingShingle | Hee-Jae Lee Geon-Hee Lee Seung-Hwan Chung Dong-Wook Byun Michael A. Schweitz Dae Hwan Chun Nack Yong Joo Minwho Lim Tobias Erlbacher Sang-Mo Koo Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering Micro gallium oxide heterostructure wide bandgap transistor aluminum oxide semiconductor |
| title | Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering |
| title_full | Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering |
| title_fullStr | Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering |
| title_full_unstemmed | Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering |
| title_short | Improved Properties of Post-Deposition Annealed Ga<sub>2</sub>O<sub>3</sub>/SiC and Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering |
| title_sort | improved properties of post deposition annealed ga sub 2 sub o sub 3 sub sic and ga sub 2 sub o sub 3 sub al sub 2 sub o sub 3 sub sic back gate transistors fabricated by radio frequency sputtering |
| topic | gallium oxide heterostructure wide bandgap transistor aluminum oxide semiconductor |
| url | https://www.mdpi.com/2673-8023/3/4/55 |
| work_keys_str_mv | AT heejaelee improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT geonheelee improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT seunghwanchung improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT dongwookbyun improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT michaelaschweitz improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT daehwanchun improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT nackyongjoo improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT minwholim improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT tobiaserlbacher improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering AT sangmokoo improvedpropertiesofpostdepositionannealedgasub2subosub3subsicandgasub2subosub3subalsub2subosub3subsicbackgatetransistorsfabricatedbyradiofrequencysputtering |