Operation Up to 500 &#x00B0;C of Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N High Electron Mobility Transistors

Operation Up to 500 &#x00B0;C of Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.7</sub>Ga<sub>0.3</sub>N High Electron Mobility Transistors

AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation. Al<sub>0.85</sub>Ga<sub>0.15</sub&g...

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Bibliographic Details
Main Authors: Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
AlGaN
GaN
high electron mobility transistor (HEMT)
high temperature
Online Access:https://ieeexplore.ieee.org/document/8676212/

Internet

https://ieeexplore.ieee.org/document/8676212/

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