Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
For solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit.
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2018-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-018-05700-9 |