Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
For solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit.
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2018-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-018-05700-9 |
| _version_ | 1818994710680698880 |
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| author | S. D. Liles R. Li C. H. Yang F. E. Hudson M. Veldhorst A. S. Dzurak A. R. Hamilton |
| author_facet | S. D. Liles R. Li C. H. Yang F. E. Hudson M. Veldhorst A. S. Dzurak A. R. Hamilton |
| author_sort | S. D. Liles |
| collection | DOAJ |
| description | For solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit. |
| first_indexed | 2024-12-20T21:02:17Z |
| format | Article |
| id | doaj.art-6d356d1822bc4063880325dacf88a1bd |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-12-20T21:02:17Z |
| publishDate | 2018-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-6d356d1822bc4063880325dacf88a1bd2022-12-21T19:26:40ZengNature PortfolioNature Communications2041-17232018-08-01911710.1038/s41467-018-05700-9Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dotS. D. Liles0R. Li1C. H. Yang2F. E. Hudson3M. Veldhorst4A. S. Dzurak5A. R. Hamilton6School of Physics, University of New South WalesSchool of Physics, University of New South WalesCentre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South WalesCentre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South WalesQuTech and Kavli Institute of Nanoscience, TU DelftCentre for Quantum Computation and Communication Technology, School of Electrical Engineering and Telecommunications, The University of New South WalesSchool of Physics, University of New South WalesFor solid state qubits, silicon MOS structures offer great scalability, while hole spins promise high performance qubit operation. Liles et al. have combined these two features in a planar silicon quantum dot device that operates as an artificial atom down to the single-hole limit.https://doi.org/10.1038/s41467-018-05700-9 |
| spellingShingle | S. D. Liles R. Li C. H. Yang F. E. Hudson M. Veldhorst A. S. Dzurak A. R. Hamilton Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot Nature Communications |
| title | Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot |
| title_full | Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot |
| title_fullStr | Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot |
| title_full_unstemmed | Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot |
| title_short | Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot |
| title_sort | spin and orbital structure of the first six holes in a silicon metal oxide semiconductor quantum dot |
| url | https://doi.org/10.1038/s41467-018-05700-9 |
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