A novel inductively coupled RLC damping scheme for eliminating switching oscillations of SiC MOSFET
Abstract Severe switching oscillations of SiC MOSFET seriously affect its efficient and reliable application. Herein, a novel inductively coupled RLC damping scheme is proposed to eliminate switching oscillations. Distinctive from existing RLC resonators, the setting that the resonant frequency of t...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-07-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12485 |