Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors
Silicon carbide junction field-effect transistors (SiC JFETs) are promising candidates as devices applicable to radiation conditions, such as the decommissioning of nuclear facilities or the space environment. We investigate the origin of the threshold volage (<i>V</i><sub>th</s...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-10-01
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| Series: | Quantum Beam Science |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2412-382X/7/4/31 |