Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors
Silicon carbide junction field-effect transistors (SiC JFETs) are promising candidates as devices applicable to radiation conditions, such as the decommissioning of nuclear facilities or the space environment. We investigate the origin of the threshold volage (<i>V</i><sub>th</s...
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| Format: | Article |
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MDPI AG
2023-10-01
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| Series: | Quantum Beam Science |
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| Online Access: | https://www.mdpi.com/2412-382X/7/4/31 |
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| author | Akinori Takeyama Takahiro Makino Yasunori Tanaka Shin-Ichiro Kuroki Takeshi Ohshima |
| author_facet | Akinori Takeyama Takahiro Makino Yasunori Tanaka Shin-Ichiro Kuroki Takeshi Ohshima |
| author_sort | Akinori Takeyama |
| collection | DOAJ |
| description | Silicon carbide junction field-effect transistors (SiC JFETs) are promising candidates as devices applicable to radiation conditions, such as the decommissioning of nuclear facilities or the space environment. We investigate the origin of the threshold volage (<i>V</i><sub>th</sub>) shift and hysteresis of differently structured SiC JFETs. A large positive <i>V</i><sub>th</sub> shift and hysteresis are observed for a depletion-type JFET with a larger depletion layer width. With changing the sweep range of the gate voltage and depletion width, the <i>V</i><sub>th</sub> shift was positively proportional to the difference between the channel depth and depletion width (channel depth–gate depletion width). By illuminating the sub-band gap light, the <i>V</i><sub>th</sub> of the irradiated depletion JFETs recovers close to nonirradiated ones, while a smaller shift and hysteresis are observed for the enhancement type with a narrower width. It can be interpreted that positive charges generated in a gate depletion layer cause a positive <i>V</i><sub>th</sub> shift. When they are swept out from the depletion layer and trapped in the channel, this gives rise to a further <i>V</i><sub>th</sub> shift and hysteresis in gamma-irradiated SiC JFETs. |
| first_indexed | 2024-03-08T20:25:03Z |
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| id | doaj.art-6d4d8060775a498baa237f373e0dbba6 |
| institution | Directory Open Access Journal |
| issn | 2412-382X |
| language | English |
| last_indexed | 2024-03-08T20:25:03Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Quantum Beam Science |
| spelling | doaj.art-6d4d8060775a498baa237f373e0dbba62023-12-22T14:38:11ZengMDPI AGQuantum Beam Science2412-382X2023-10-01743110.3390/qubs7040031Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect TransistorsAkinori Takeyama0Takahiro Makino1Yasunori Tanaka2Shin-Ichiro Kuroki3Takeshi Ohshima4National Institutes for Quantum Science and Technology, 1233 Watanuki-Machi, Takasaki 370-1292, JapanNational Institutes for Quantum Science and Technology, 1233 Watanuki-Machi, Takasaki 370-1292, JapanNational Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8560, JapanResearch Institute for Nanodevices, Hiroshima University, 1-4-2 Kagamiyama, Higashi-Hiroshima 739-8527, JapanNational Institutes for Quantum Science and Technology, 1233 Watanuki-Machi, Takasaki 370-1292, JapanSilicon carbide junction field-effect transistors (SiC JFETs) are promising candidates as devices applicable to radiation conditions, such as the decommissioning of nuclear facilities or the space environment. We investigate the origin of the threshold volage (<i>V</i><sub>th</sub>) shift and hysteresis of differently structured SiC JFETs. A large positive <i>V</i><sub>th</sub> shift and hysteresis are observed for a depletion-type JFET with a larger depletion layer width. With changing the sweep range of the gate voltage and depletion width, the <i>V</i><sub>th</sub> shift was positively proportional to the difference between the channel depth and depletion width (channel depth–gate depletion width). By illuminating the sub-band gap light, the <i>V</i><sub>th</sub> of the irradiated depletion JFETs recovers close to nonirradiated ones, while a smaller shift and hysteresis are observed for the enhancement type with a narrower width. It can be interpreted that positive charges generated in a gate depletion layer cause a positive <i>V</i><sub>th</sub> shift. When they are swept out from the depletion layer and trapped in the channel, this gives rise to a further <i>V</i><sub>th</sub> shift and hysteresis in gamma-irradiated SiC JFETs.https://www.mdpi.com/2412-382X/7/4/31SiCJFETgamma raysthreshold voltage shiftdepletion layer width |
| spellingShingle | Akinori Takeyama Takahiro Makino Yasunori Tanaka Shin-Ichiro Kuroki Takeshi Ohshima Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors Quantum Beam Science SiC JFET gamma rays threshold voltage shift depletion layer width |
| title | Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors |
| title_full | Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors |
| title_fullStr | Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors |
| title_full_unstemmed | Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors |
| title_short | Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors |
| title_sort | influence of gate depletion layer width on radiation resistance of silicon carbide junction field effect transistors |
| topic | SiC JFET gamma rays threshold voltage shift depletion layer width |
| url | https://www.mdpi.com/2412-382X/7/4/31 |
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