Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance. To study the trapping effect on the device large-signal behavior, AlGa...

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Bibliographic Details
Main Authors: Kun-Ming Chen, Chuang-Ju Lin, Chia-Wei Chuang, Hsuan-Cheng Pai, Edward-Yi Chang, Guo-Wei Huang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Micromachines
Subjects:
GaN
HEMT
large-signal characterization
trapping effect
UV illumination
X-parameter
Online Access:https://www.mdpi.com/2072-666X/14/5/1011

Internet

https://www.mdpi.com/2072-666X/14/5/1011

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