DIRECT TUNNELLING AND MOSFET BORDER TRAPS
The border traps, in particular slow border traps, are being investigated in metal-oxide-semiconductor structures, utilizing n-channel MOSFET as a test sample. The industrial process technology of test samples manufacturing is described. The automated experimental setup is discussed, the implementat...
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| Format: | Article |
| Language: | English |
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Science and Innovation Center Publishing House
2015-09-01
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| Series: | International Journal of Advanced Studies |
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| Online Access: | http://journal-s.org/index.php/ijas/article/view/8532 |