DIRECT TUNNELLING AND MOSFET BORDER TRAPS

DIRECT TUNNELLING AND MOSFET BORDER TRAPS

The border traps, in particular slow border traps, are being investigated in metal-oxide-semiconductor structures, utilizing n-channel MOSFET as a test sample. The industrial process technology of test samples manufacturing is described. The automated experimental setup is discussed, the implementat...

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Bibliographic Details
Main Author: Vladimir Drach
Format: Article
Language:English
Published: Science and Innovation Center Publishing House 2015-09-01
Series:International Journal of Advanced Studies
Subjects:
MOSFET
gate oxide
border traps
direct tunnelling
Online Access:http://journal-s.org/index.php/ijas/article/view/8532

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