A Direct n<sup>+</sup>-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N<sup>+</sup>-IGZO regions and excellent ohmic contact can be obtained without additional steps b...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-04-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/5/652 |
| Summary: | An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N<sup>+</sup>-IGZO regions and excellent ohmic contact can be obtained without additional steps by using a magnetron sputtering process to deposit a SiO<sub>x</sub> ILD. The fabricated IGZO TFTs show a subthreshold swing (SS) of 94.16 mV/decade and a linear-region field-effect mobility (<i>μ<sub>FE</sub></i>) of 23.06 cm<sup>2</sup>/Vs. The channel-width-normalized source/drain series resistance (<i>R<sub>SD</sub>W</i>) extracted using the transmission line method (TLM) is approximately as low as 9.4 Ω·cm. The fabricated ring oscillator (RO) with a maximum oscillation frequency of 1.75 MHz also verifies the applicability of the TFTs. |
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| ISSN: | 2072-666X |