High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors

<p>Abstract</p> <p>We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propos...

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Bibliographic Details
Main Authors: Kim Sangsig, Choi Chang-Young, Lee Ji-Hoon, Koh Jung-Hyuk, Ha Jae-Geun, Koo Sang-Mo
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Field-effect transistors (FETs)
Electron mobility
Variation of the current level
Nanoribbon FET
Online Access:http://dx.doi.org/10.1007/s11671-010-9714-y

Internet

http://dx.doi.org/10.1007/s11671-010-9714-y

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