High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors
<p>Abstract</p> <p>We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propos...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2010-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-010-9714-y |
| _version_ | 1797760559474540544 |
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| author | Kim Sangsig Choi Chang-Young Lee Ji-Hoon Koh Jung-Hyuk Ha Jae-Geun Koo Sang-Mo |
| author_facet | Kim Sangsig Choi Chang-Young Lee Ji-Hoon Koh Jung-Hyuk Ha Jae-Geun Koo Sang-Mo |
| author_sort | Kim Sangsig |
| collection | DOAJ |
| description | <p>Abstract</p> <p>We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10<sup>−6</sup>).</p> |
| first_indexed | 2024-03-12T19:00:20Z |
| format | Article |
| id | doaj.art-6d8cb83de099415eb185a188330efc0b |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:00:20Z |
| publishDate | 2010-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-6d8cb83de099415eb185a188330efc0b2023-08-02T06:41:46ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-0151117951799High-Temperature Stable Operation of Nanoribbon Field-Effect TransistorsKim SangsigChoi Chang-YoungLee Ji-HoonKoh Jung-HyukHa Jae-GeunKoo Sang-Mo<p>Abstract</p> <p>We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25–150°C, involving the application of a suitable (1) positive or (2) negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range, the latter shows an improvement in the off-state control of up to five orders of magnitude (−5.2 × 10<sup>−6</sup>).</p>http://dx.doi.org/10.1007/s11671-010-9714-yField-effect transistors (FETs)Electron mobilityVariation of the current levelNanoribbon FET |
| spellingShingle | Kim Sangsig Choi Chang-Young Lee Ji-Hoon Koh Jung-Hyuk Ha Jae-Geun Koo Sang-Mo High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors Nanoscale Research Letters Field-effect transistors (FETs) Electron mobility Variation of the current level Nanoribbon FET |
| title | High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors |
| title_full | High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors |
| title_fullStr | High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors |
| title_full_unstemmed | High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors |
| title_short | High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors |
| title_sort | high temperature stable operation of nanoribbon field effect transistors |
| topic | Field-effect transistors (FETs) Electron mobility Variation of the current level Nanoribbon FET |
| url | http://dx.doi.org/10.1007/s11671-010-9714-y |
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