THE EFFECT OF Ge CONTENT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF a-SiGe:H THIN FILMS
The effect of Ge content on the optical and electrical properties of Si-Ge-H thin films deposited by HWCPECVD had been investigated. The Si- Ge-H films ware grown on corning glass 7059 substrate using 10% diluted GeH4 and SiH4 gas mixture, respectively. The GeH4 gas flow rate was varied from 2.5 to...
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Format: | Article |
Language: | English |
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Universitas Syiah Kuala, Faculty of Mathematics and Natural Science
2014-04-01
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Series: | Jurnal Natural |
Online Access: | http://www.jurnal.unsyiah.ac.id/natural/article/view/1171 |
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author | Mursal Mursal Irhamni Irhamni Toto Winata |
author_facet | Mursal Mursal Irhamni Irhamni Toto Winata |
author_sort | Mursal Mursal |
collection | DOAJ |
description | The effect of Ge content on the optical and electrical properties of Si-Ge-H thin films deposited by HWCPECVD
had been investigated. The Si- Ge-H films ware grown on corning glass 7059 substrate using 10% diluted
GeH4 and SiH4 gas mixture, respectively. The GeH4 gas flow rate was varied from 2.5 to 12.5 sccm, while the flow
rate of SiH
was kept constant at 70 sccm. The results showed that the deposition rate of Si-Ge-H thin films was
increases with the increasing of GeH4 gas flow rate. Beside, the Ge content in the film also increased, and the optical
band gap decreased. The dark conductivity of Si- Ge-H films was relatively constant, whereas the photo ’s
conductivity decreased with increasing of Ge content. |
first_indexed | 2024-04-24T15:18:07Z |
format | Article |
id | doaj.art-6d92ecd01062409da16a6199de5f0433 |
institution | Directory Open Access Journal |
issn | 1411-8513 2541-4062 |
language | English |
last_indexed | 2024-04-24T15:18:07Z |
publishDate | 2014-04-01 |
publisher | Universitas Syiah Kuala, Faculty of Mathematics and Natural Science |
record_format | Article |
series | Jurnal Natural |
spelling | doaj.art-6d92ecd01062409da16a6199de5f04332024-04-02T09:03:57ZengUniversitas Syiah Kuala, Faculty of Mathematics and Natural ScienceJurnal Natural1411-85132541-40622014-04-011321119THE EFFECT OF Ge CONTENT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF a-SiGe:H THIN FILMSMursal Mursal0Irhamni Irhamni1Toto Winata2Department of Physics, Faculty of Science, Syiah Kuala UniversityDepartment of Physics, Faculty of Science, Syiah Kuala UniversityDepartment of Physics, Bandung Institute of TechnologyThe effect of Ge content on the optical and electrical properties of Si-Ge-H thin films deposited by HWCPECVD had been investigated. The Si- Ge-H films ware grown on corning glass 7059 substrate using 10% diluted GeH4 and SiH4 gas mixture, respectively. The GeH4 gas flow rate was varied from 2.5 to 12.5 sccm, while the flow rate of SiH was kept constant at 70 sccm. The results showed that the deposition rate of Si-Ge-H thin films was increases with the increasing of GeH4 gas flow rate. Beside, the Ge content in the film also increased, and the optical band gap decreased. The dark conductivity of Si- Ge-H films was relatively constant, whereas the photo ’s conductivity decreased with increasing of Ge content.http://www.jurnal.unsyiah.ac.id/natural/article/view/1171 |
spellingShingle | Mursal Mursal Irhamni Irhamni Toto Winata THE EFFECT OF Ge CONTENT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF a-SiGe:H THIN FILMS Jurnal Natural |
title | THE EFFECT OF Ge CONTENT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF a-SiGe:H THIN FILMS |
title_full | THE EFFECT OF Ge CONTENT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF a-SiGe:H THIN FILMS |
title_fullStr | THE EFFECT OF Ge CONTENT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF a-SiGe:H THIN FILMS |
title_full_unstemmed | THE EFFECT OF Ge CONTENT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF a-SiGe:H THIN FILMS |
title_short | THE EFFECT OF Ge CONTENT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF a-SiGe:H THIN FILMS |
title_sort | effect of ge content on the optical and electrical properties of a sige h thin films |
url | http://www.jurnal.unsyiah.ac.id/natural/article/view/1171 |
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