Effect of Process Parameters on Mode Conversion in Submicron Tapered Silicon Ridge Waveguides

Effect of Process Parameters on Mode Conversion in Submicron Tapered Silicon Ridge Waveguides

The modal property and light propagation in tapered silicon ridge waveguides with different ridge heights are investigated for a silicon on insulator (SOI) platform with a 500 nm silicon (Si) thickness. Mode conversion between the transverse magnetic (TM) fundamental and higher-order transverse elec...

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Autors principals: Zakriya Mohammed, Bruna Paredes, Mahmoud Rasras
Format: Article
Idioma:English
Publicat: MDPI AG 2021-03-01
Col·lecció:Applied Sciences
Matèries:
photonic integrated circuits
silicon photonics
mode hybridization
mode converters
polarization splitter and rotators
tapered waveguides
Accés en línia:https://www.mdpi.com/2076-3417/11/5/2366

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https://www.mdpi.com/2076-3417/11/5/2366

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